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Summary
| Description |
English: Proposed TMDC-based high-electron-mobility transistor device with top-gated Schottky contact and TMDC layers with different doping levels |
| Date | |
| Source | Own work |
| Author | Chem171group9 |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 21:50, 17 March 2015 | | 936 × 609 (17 KB) | Chem171group9 | User created page with UploadWizard |
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