File:AlInAs bandgaps.png
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Summary[edit]
| Description |
Composition dependence of the direct and indirect band gaps of AlInAs at room temperature (T = 300 K). |
|---|---|
| Source |
Created in MATLAB from the parameters given in: Vurgaftman, I., Meyer, J. R. & Ram-Mohan, L. R. Band parameters for III–V compound semiconductors and their alloys. Journal of Applied Physics 89, 5815–5875 (2001). |
| Date |
2024-03-17 |
| Author | |
| Permission (Reusing this file) |
See below.
|
Licensing[edit]
  | This file is made available under the Creative Commons CC0 1.0 Universal Public Domain Dedication.
The person who associated a work with this deed has dedicated the work to the public domain by waiving all of his or her rights to the work worldwide under copyright law, including all related and neighboring rights, to the extent allowed by law. You can copy, modify, distribute and perform the work, even for commercial purposes, all without asking permission. |
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| current | 23:11, 17 March 2024 | | 883 × 910 (40 KB) | MaterialsPsych (talk | contribs) | {{Information |Description = Composition dependence of the direct and indirect band gaps of AlInAs at room temperature (T = 300 K). |Source = Created in MATLAB from the parameters given in: Vurgaftman, I., Meyer, J. R. & Ram-Mohan, L. R. Band parameters for III–V compound semiconductors and their alloys. Journal of Applied Physics 89, 5815–5875 (2001). |Date = 2024-03-17 |Author = MaterialsPsych }} |
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