File:Secuencia de Fabricación de un MMIC mediante implantación de iones de GaAs.png
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Summary
| Description |
English: El esquema muestra las regiones de los canales activos y contacto óhmico del FET logrando una baja resistencia en los bornes drenador y surtidor. |
| Source | Own work |
| Author | Paulmasters |
Licensing
|
I, the copyright holder of this work, release this work into the public domain. This applies worldwide. In some countries this may not be legally possible; if so: I grant anyone the right to use this work for any purpose, without any conditions, unless such conditions are required by law. |
File history
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 10:58, 23 January 2010 | | 455 × 600 (23 KB) | Paulmasters | {{Information |Description={{en|1=El esquema muestra las regiones de los canales activos y contacto óhmico del FET logrando una baja resistencia en los bornes drenador y surtidor.}} |Source={{own}} |Author=Paulmasters |Date= |Permiss |
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