Draft:SK Ray

Samit Kumar (SK) Ray is currently the Institute Chair Professor at the Department of Physics, Indian Institute of Technology (IIT) Kharagpur. He is renowned in the fields of semiconductors,opto-electronic devices,nanophotonics,electronic materials and nano-electronics. He served as Director of S. N. Bose National Centre for Basic Sciences, Kolkata [2016-2021].

Ray is an elected fellow of the Indian Academy of Sciences Bangalore ,Indian National Academy of Sciences ,Indian National Academy of Engineering (in the domain of Electronics and Communication Engineering). He is the recipient of the Indian National Science Academy (INSA) Young Scientist Award of year 1993.

Education and professional experience
Ray obtained his M.Tech and PhD from IIT Kharagpur in 1984 and 1991 respectively. He has served as the Dean, Postgraduate Studies and Research (2015 – 2016), Head of the Department of Physics (2011-2014), founder Chair of the School of Nanoscience and Technology (2014-2016) at IIT Kharagpur. He has served as a visiting faculty / Scientist at the Tokyo Institute of Technology,Japan, University of Delaware, Newark, USA, University of Texas, Austin, USA, Max-Planck Institute for Solid State Research, Germany, Queen’s University of Belfast, UK, National Taiwan University,Taiwan and Chang Gung University, Taiwan. He is currently an Editorial Board member of the journal Nanotechnology, published by IOP, UK.

Research Interests
Ray’s research focusses on Semiconductor nanostructures,Epitaxial growth of quantum structures,Nanophotonics, Nanoelectronics and Physics of nanodevices.His research has run the gamut from very practical fields such as pseudomorphic strained SiGe/SiGeC alloy heterostructures for high mobility MOSFETs to low dimensional quantum structures.His studies on Ge quantum dots and strained Ge to achieve light emission from an indirect bandgap semiconductor are useful to realize Si based lasers in future.His research results on floating-gate flash memory, 2D/3D heterostructures, quantum dot infrared photodetectors and nanowire heterojunctions are considered as significant breakthroughs for future nanodevices. Ray has published more than 350 research papers in peer reviewed journals, one US patent   and co-authored a book on “Strained Silicon Heterostructures: Materials and Devices” published by IEE, UK.