Portal:Electronics/Selected article/5


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 * [[Image:BJT symbol PNP.svg|40px]] || PNP
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A bipolar junction transistor (BJT) is a type of transistor. It is a three-terminal device constructed of doped semiconductor material and may be used in amplifying or switching applications. Bipolar transistors are so named because their operation involves both electrons and holes. Although a small part of the base–emitter current is carried by the majority carriers, the main current is carried by minority carriers in the base, and so BJTs are classified as 'minority-carrier' devices.

The bipolar (point-contact) transistor was invented in December 1947 at the Bell Telephone Laboratories by John Bardeen and Walter Brattain under the direction of William Shockley. The junction version was invented by Shockley in 1951.