Talk:Dopant activation

Dopant deactivation and Microelectronics Longevity
There is apparently a process called Dopant Deactivation. I am uncertain whether this is necessarily associated with the aging of microelectronics. Co-implantation strategies (of other dopants) are indicated as one method of reducing deactivation during annealing (http://swamp.mse.ufl.edu/dissertations/clark_m.pdf). I am uncertain as to whether the deactivation that occurs during annealing (assumed to be part of manufacture) is the same as the deactivation that occurs with aging. I am uncertain of whether Electrical (or Electromagnetic) field induced strain over a prolonged period of time can cause anything that might be termed 'Dopant deactivation'. Would it be correct in this case to say that the dopant atoms somehow separate from the rest of the Silicon in such a way as to alter the electrical properties of the microelectronic silicon? Could more advanced co-implantation strategies help to prevent Dopant Deactivation? It would seem clear that the use of multiple co-implanted dopants would significantly alter the electronic properties/'crystalline' structure of the silicon-dopant 'crystal'. I think that the article should mention that Dopant Deactivation is a possible cause of microelectronics failure/aging (if, indeed, it is!). ASavantDude (talk) 22:33, 25 January 2017 (UTC)

capitalization
In this edit I adjusted the capitalization in the lead to conform both with the article title and this cited source, but @MeadeIndeed reverted, asserting, "the spelling is correct." Rather than simply undo that good-faith revert, I am asking the input of other editors. ~TPW 13:38, 29 July 2023 (UTC)


 * I looked at several different articles in a similar vein to the one in question and I made a mistake in reverting the capitalization as in this case it was indeed accurate. I've gone ahead and undid my revert. I apologise for my mistake, @True Pagan Warrior. MeadeIndeed (talk) 20:32, 29 July 2023 (UTC)