Talk:Intrinsic semiconductor

From page : Kindly check the authenticity of this description. Si and Ge are described as intrinsic semiconductors. Cross check and edit the description as required. This page could be expanded / possibly merged ? 128.113.54.174 (talk) 00:34, 23 September 2008 (UTC)

"A silicon crystal is different from an insulator because at any temperature above absolute zero, there is a finite probability that an electron in the lattice will be knocked loose from its position, leaving behind an electron deficiency called a 'hole'." That sounds like nonsense since exactly the same description could be applied to an insulator. AFAIK, the difference between “insulator” and “semiconductor” is the magnitude of the gap, and hence the probability of thermal excitation. (Aside from possible connotations of different applications.) --Æ (talk) 08:32, 7 October 2015 (UTC)

Within the article, the following claim is stated: "This may even be the case after doping the semiconductor, though only if it is doped with both donors and acceptors equally. In this case, n = p still holds, and the semiconductor remains intrinsic, though doped." I am accustomed to a semiconductor that is doped with both donors and acceptors equally being called a compensated semiconductor. There does not appear to be any mention of this phrase here, nor a separate page about it (although a quick googling seems to support my claim). Can someone with a better background in the area contribute more about this? Thanks, Samnotwil (talk) 04:28, 7 May 2017 (UTC)

Carriers and mobility
Is equal current carried by the electrons and holes ? How do the numbers and mobilities compare ? - Rod57 (talk) 17:42, 21 April 2021 (UTC)