Talk:Organic field-effect transistor

Device Design - TFT section - Why should Fermi level misalignment lead to band bending at a MIS interface?
It is written: "If there is zero bias, the electrons are expelled from the surface due to the Fermi-level energy difference of the semiconductor and the metal.". I do not understand why this should happen, because there is no charge that could expell another charge. In my opinion, this explanation is only available to metal (organic) semiconductor interfaces, because there the different Fermi levels can align by flowing charges and with this a band bending occurs. But for the MIS interface this cannot happen, since the charges cannot flow through the insulator. Mentioning a source for the given statement would be helpful or providing a more detailed explanation. BrightEyes5554 (talk) 14:52, 07 April 2014 (UTC) — Preceding unsigned comment added by 129.206.127.102 (talk)

Feynmans Law
Oh dear. This article is useless to anyone who doesnt study or work in the field of electronics, isnt it.

Needs a serious cleanup. Wikipedia isnt for semiconductor experts, its for people, and as Richard Feynman says, if you cant explain a concept to highschool kids, it means you dont understand it yourself. Not clever. — Preceding unsigned comment added by 2.110.239.227 (talk) 11:50, 28 November 2014 (UTC)

Agreed. The article was clearly written by some excited graduate student, probably one doing synthesis (eg an organic chemist who sometimes uses materials characterization instruments, spending 85-95% of their time in front of a fume hood and more practical, hands on, specialization in air/oxygen free organic synthesis than tricky solid state sample prep or device construction and a much more limited mathematical background than your typical solid state materials science person)2600:1700:DEA0:EE80:78FA:1EF2:798C:46D7 (talk) 00:41, 20 August 2018 (UTC)