User:Atomisitix/sandbox

Non linear piezoelectric effects in polar semiconductors were first reported in 2006 by G.Bester et al and by M.A. Migliorato et al, in relation to zincblende GaAs and InAs. Different methods were used in the seminal papers and while the influence of second (and third) order piezoelectric coefficients was generally recognized as being comparable to first order, fully ab initio and what is currently known as Harrison's model, appeared to predict slightly different results, particularly for the magnitude of the first order coefficients.

Available Non Linear Piezoelectric Parameters
Since 2006 many more articles were published which discussed many aspects and different semiconductor materials and crystal structures:


 * zincblende GaAs and InAs, under pseudomorphic strain
 * zincblende GaAs and InAs, for any combination of diagonal strain components
 * All common III-V semiconductors in the zincblende structure
 * GaN, AlN, InN in the wurtzite structure
 * GaN, AlN, InN in the wurtzite structure
 * ZnO in the wurtzite structure
 * wurtzite GaAs, InAs, GaP and InP

Furthermore, particularly for III-N semiconductors, the influence of non linear piezoelectricity was discussed in the context of light emitting diodes:
 * Influence of external pressure
 * Increased efficiency