User:Biplobdaas/sandbox

Biplob Kumar Daas, PhD Product Development Engineer, Intel (h-index 4, i-10 index 2)

Google citation site:  http://scholar.google.com/citations?user=6bLHhDkAAAAJ&hl=en 		                                                                                                                                                                                                                                 ________________________________________¬¬¬¬¬¬¬¬¬ Current position: Product Development engineer                                                                        (Feb’2014 to present) Intel, Hillsboro, USA

Previous Position: D1D ramp VDF engineer                                                                                 (Oct’2012 to Feb’2014) Intel, Hillsboro, USA

Previous Position: Lecturer, Ahsanullah University of Science & Technology                            (Dec’2006 to Dec’2008) Dhaka, Bangladesh

Courses Taught: Digital logic circuit-1, Digital logic-2, Solid state electronics

Ph.D in Electrical Engineering					                                    Sept’ 2012 University of South Carolina, Columbia, SC 29208, USA			                 GPA:3.91/4.0 M.E in Electrical Engineering					                                     May 2011 University of South Carolina, Columbia, SC 29208, USA			            (GPA:3.87/4.00)

B.Sc in Electrical and Electronic Engineering				             December 2006 Bangladesh University of Engineering &Technology, Dhaka, Bangladesh	               GPA:3.76/4.0										      Rank: 18th out of 160

•	“Dean’s award for Excellence in graduate study-2012” in University of South Carolina (USC) •	1st prize in poster presentation in annual graduate student competition-2012 at USC •	Recipient of graduate research assistantship through academic period 2009 to present •	ARVA Hindu Foundation, Charlotte, NC fellowship for academic year 2009-2010 & 2011-2012 •	Dean’s merit list award for 6 times out of 8 semesters in BUET during undergraduate study. •	Ranked 7th position in Jessore education board and 13th in Bangladesh for the result in “O” level. •	Honorable Ex-cadet mentioned by the High school (JCC) for lifetime.

	SMALL Micro Nano (Impact Factor=7.33) 	Advanced Materials (Impact Factor=10.88) 	Advanced Functional Material (Impact Factor=9.76) 	Journal of Applied Physics (Impact Factor=2.21)

Doctoral Experience (Jan’09 to Sept’2012) Clean Energy Laboratory, (CEL) University of South Carolina, Columbia, SC •	Designed and developed a novel technique for characterizing the EG/SiC interface using FTIR •	Epitaxial graphene (EG) growth using automated, self built & optimized RF reactor furnace •	Initiated EG growth at USC on different off cut as well as polar and non-polar SiC •	Analyzed molecular adsorption behavior of EG using FTIR for the first time. •	A novel electrochemical technique for graphene functionalization: Graphene to graphane conversion. SiC Laboratory, University of South Carolina, Columbia, SC •	Led the fabrication of nano electromechanical uncooled infra red sensor using suspended epitaxial graphene on SiC by oxygen plasma etching and photo-electrochemical etching. •	Design and fabrication of high frequency FET based on self grown epitaxial graphene on SiC •	Led the fabrication and characterization of epitaxial graphene based RF microwave switches •	Fabrication of various structure such as Schottky, MOS, TLM etc. for material characterization •	Fabricated SiC p-i-n diode with JTE edge termination for high voltage application. •	SiC epitaxial growth by CVD reactor using dichlorosilane. Nano Electronics & Sensor Laboratory, (NESL) University of South Carolina, Columbia, SC •	Development of novel techniques based on scanning probe microscopy to investigate the surface electronic property of CVD and epitaxial graphene on doped/undoped SiC. •	Investigate the effect of molecular adsorption of different target molecules such as NO2, NH3 on surface electronic properties such as surface work function and surface electron affinity on epitaxial graphene.

Journal papers:

Publication in 2004: 1.	Imtiaz Ahmed, Biplob Daas and Ziaur Rahman “Web based pre-paid printing system using server modification”, Journal of Bangladesh Electronic Society, July, 2004

Publication in 2010: 2.	Feng Zhao, Mohammad M. Islam, Biplob K. Daas and Tangali S. Sudarshan “Effect of crystallographic dislocations on the reverse performance of 4H-SiC p–n diodes” material lett. Vol.64 no.3 pp.281-283 (2010)

Publication in 2011: 3.	B.K. Daas, K. M. Daniels, T.S. Sudarshan and M.V.S. Chandrashekhar “Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC” Journal of Appl. Phys. Vol 110, issue 11 ,113114 (2011) 4.	B. K. Daas, M. M. Islam, I. A. Chowdhury, F. Zhao, T. S. Sudarshan and M.V.S. Chandrashekhar, “Doping Dependence of Thermal Oxidation on n-type 4H-SiC”, IEEE Transactions on Electron Devices, Vol. 58, Issue 1, pp. 115-121, 2011

Publication in 2012: 5.	B. K. Daas, K. M. Daniels, S.Shetu, T.S. Sudarshan, M.V.S. Chandrashekhar “Epitaxial Graphene Growth on non polar SiC faces” Matt. Sci. Forum Vol 717-720 pp 633-636 (2012) 6.	B. K. Daas, W.K.Nomani, K.M.Daniels, T.S. Sudarshan, Goutam Koley and MVS Chandrashekhar“ Molecular Gas Adsorption Induced Carrier Transport Studies of Epitaxial Graphene using Polariton Enhanced IR Reflection Spectroscopy: Influence of Interband Scattering“,Matt. Sci. Forum Vol 717-720 pp 665-668 7.	B. K. Daas, K. M. Daniels, T.S. Sudarshan and M.V.S. Chandrashekhar “Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC” Vir. J. Nan. Sci. & Tech. Volume 25 Issue 1 (2012) 8.	Kevin M. Daniels, B. K. Daas, N. Srivastava, C. Williams, R. M. Feenstra,T.S. Sudarshan, MVS Chandrashekhar “Evidence of Electrochemical Graphene Functionalization by Raman and Scanning Tunneling Spectroscopies: Evidence of Substrate Dependence” J. Appl. Phys. 111, 114306 (2012);. 9.	B. K. Daas, K. M. Daniels, S. Shetu, T.S. Sudarshan and M.V.S. Chandrashekhar “Comparison of epitaxial Graphene Growth on polar and non polar SiC faces” Cryst. Growth Des., 2012, 12 (7), pp 3379–3387

Publication in 2013 10.	Shamaita S. Shetu, S. U. Omar, K. M. Daniels, B.K.Daas, J. Andrews, S. Ma1, T. S. Sudarshan and M. V. S. Chandrashekhar” Si-adatom kinetics in defect mediated growth of multilayer epitaxial graphene films on 6H-SiC” J. Appl. Phys. 114, 164903 (2013) 11.	C. Coletti, S. Forti, A. Principi, K. V. Emtsev, A. A. Zakharov, K. M. Daniels, B. K. Daas, M. V. S. Chandrashekhar, T. Ouisse, D. Chaussende, A. H. MacDonald, M. Polini, and U. Starke” Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study” Phys. Rev. B 88, 155439 (2013) Publication in 2014 12.	B.K.Daas “SiC substrate dependence epitaxial graphene growth: Effect of growth temperature and substrate off-cut angle” Merit Research Journal of Engineering, Pure and Applied Sciences Vol. 2(1) pp. 005-008, January, 2014 13.	B.K. Daas & Amit Dutta “Electromagnetic dispersion for surface plasmon polarition at EG/SiC interface”—Revised manuscript submitted to JMR

Selected Conference presentations: 	F. Zhao, B. K. Daas, M. M. Islam, T. S. Sudarshan” Impact of Screw and Basal Plane Dislocations on the Reverse I-V Characteristics of 4H-SiC p-i-n Diodes” ICSCRM Conference (2009).

	Kevin M. Daniels, Biplob Daas, R. Zhang, J. Weidner, C. Williams, T.S. Sudarshan, MVS Chandrashekhar” Graphene to Graphane: Novel Electrochemical Conversion and PossibleApplications” Electronic Material conference (2010) 	B.K. Daas, K. M. Daniels, T.S. Sudarshan, M.V.S. Chandrashekhar “Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC”MRS conference (2010). 	B.K. Daas, K. M. Daniels, T.S. Sudarshan, M.V.S. Chandrashekhar “Epitaxial Graphene Growth on non polar SiC faces” Electronic Material conference, Santabarbara (2011) 	B.K. Daas, K. M. Daniels, S. Shetu, W.K. Nomani, Goutam Koley, T.S. Sudarshan, M.V.S. Chandrashekhar “Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC” Electronic Material conference Santabarbara (2011) 	Kevin M. Daniels, B. Daas, R. Zhang, J. Weidner, C. Williams, T.S. Sudarshan, MVS Chandrashekhar “Electrochemical Graphane Conversion using E-beam Evaporated Metals for Catalytic Enhancement ” Electronic Material conference, Santabarbara (2011) 	B. K. Daas, K. M. Daniels, T.S. Sudarshan and M.V.S. Chandrashekhar “Epitaxial Graphene Growth on non polar SiC faces”,  ICSCRM Conference, Cleveland, Ohio, Sept 18 (2011) 	B.K. Daas, K. M. Daniels, S. Shetu, W.K. Nomani, Goutam Koley, T.S. Sudarshan and M.V.S. Chandrashekhar “Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC”, ICSCRM Conference, Cleveland, Ohio, Sept 18 (2011) 	B.K Daas, K. M Daniels, W.K Nomani, G. Koley, A. Mendez, T.S Sudarshan, MVS Chandrashekhar “Advance in Molecular Gas Sensing Studies Using Epitaxial Graphene with application in the nuclear industry ”.. ANS Winter Meeting and Nuclear Technology (2011) 	C. Coletti, B.K Daas, K.M Daniels, MVS Chandrashekhar “The electronic band structure of quasi-free standing trilayer graphene on SiC”..Graphene week (2012) 	B.K Daas, A.Singh, J.Tolson, S.Ma, T.S Sudarshan, G. Koley and MVS Chandrashekhar “Infra red reflection spectra of epitaxial graphene grown on Cu and Ni” ”..accepted in Electronic Material Conference (2012). 	B.K. Daas, S.Ma, T.S. Sudarshan and MVS Chandrashekhar “Dispersion Relation of Plasmons at EG/SiC Interface: Tuning the Plasmon” ”..accepted in Electronic Material Conference (2012). 	Kevin M. Daniels, N. Aich, K.P. Miller, B. K Daas, N. Saleh, A. W. Decho, T. S. Sudarshan, MVS Chandrashekhar “Biological Sensing Applications of Epitaxial Graphene”..accepted in Electronic Material Conference (2012). 	SS Shetu, B.K Daas, KM Daniels, TS Sudarshan, G Koley, MVS Chandrashekhar “Selective Multimodal Gas Sensing in Epitaxial Graphene by Fourier Transform Infrared Spectroscopy” IEEE Sensors 2013,Baltimore,MD 	S Shetu, BK Daas, TS Sudarshan, MVS Chandrashekhar “Surface plasmon group velocity of c/60 using Graphene/SiC Ribbon Gratings: Shrinking optical components to electronic dimensions” Electronic Materials Conference 2013