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Connection to Superconductors
When extra carriers are doped into a Mott insulator, the Mott gap is populated with electronic states. In contrast to the rigid localized electrons associated with a mott insulator, as the concentration of electronic states within the Mott gap increases, electron mobility in the material also increases. The increase in electron mobility can also be brought about by increase pressure, as predicted by the Hubbard Model. While these new materials maintain some of the strongly correlated nature of a Mott insulator, new electronic properties emerge. A phase diagram can be constructed showing emergent properties that are dependent on pressure or dopant concentration and temperature, specifically a pseudogap and superconductivity. Probing the properties of Mott insulators in this way has been important in understanding the solid-state physics of high-temperature superconductors.