User:Lau Wai Shing

Wai Shing Lau

Wai Shing Lau was born in Hong Kong on 29th July 1955. He got his PhD in Electrical Engineering from the Pennsylvania State University.

He was the first in making a correlation between the leakage current of ultrathin tantalum oxide films with defect states detected by zero-bias thermally stimulated current. He invented "zero temperature gradient zero bias thermally stimulated current" as a method to detect defect states in ultrathin high-k dielectric films.

He also wrote various papers on MOS transistors.