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Algis Jurgis Kundrotas (July 15, 1950, Užšustis, Šilutė district, Lithuania) is a Lithuanian physicist, habilitated doctor of physical sciences, university professor and independent researcher.

Undergraduate Education
Vilnius Pedagogical Institute from 1968 to 1972, where he completed his university studies in 1972 (diploma in physics cum laude; su pagyrimu lot).

Postgraduate Education
He completed his subsequent studies in Vilnius at the Semiconductor Physics Institute from 1976 to 1979. He became candidate of physical and mathematical sciences (Doctor of Natural Sciences; Ph.D. degree) in 1981, when he defended his dissertation at Vilnius University (thesis on: Investigation of kinetic processes in narrow gap semiconductor PtSb2). He became a Doctor of Physical Sciences (Dr. Habil. of Physical Sciences, Physics; DrSc. degree - physics) in Vilnius Semiconductor Physics Institute in 1999 (thesis on: Impact ionisation of shallow impurities and excitons in A3B5 semiconductors and quantum wells).

Professional Experience
From 1980 to 2015, Algis Jurgis Kundrotas worked at the Semiconductor Physics Institute, where he progressed through various positions. Between 1980 and 1986 as a Junior Research Associate, followed by a two-year period (1986–1987) as a Research Associate. From 1987 to 2000 he held the position of Senior Research Associate. In 2001 he was appointed as Chief Researcher and Algis Jurgis Kundrotas remained in this position until 2010. From 2010 until the end of his career in 2015, A. J. Kundrotas was a Senior Researcher at the Semiconductor Physics Institute of Center for Physical Sciences and Technology (FTMC).

Moreover, he started his university teaching career (with the title of university professor) in 2002 at Gediminas Technical University in Vilnius, Lithuania, where he was employed at the Physics Department from 2002 to 2015. He lectured in the field of mathematical modelling of physical processes for Master's students. From 2009 he was Certificated Professor of physical sciences of the Vilnius Gediminas’ Technical University and the title is valid all time from the time of Certification. From finishing professional scientific career in 2015 up to at present he has been working as an independent scientific researcher.

Specialization and scientific interests
Algis Jurgis Kundrotas's main scientific field is the physics of semiconductors and semiconductor nanostructures. Other fields are:
 * Experimental methods and computer simulations;
 * Low-temperature continuous and transient photoluminescence experiments with bulk semiconductors and quantum wells;
 * Avalanche decay of excitons and impurities in high electric fields;
 * The effect of radiation on semiconductor nanostructures and its application in radiation detectors;
 * Time-correlated single photon counting systems and their application to the investigation of transient processes in semiconductors and semiconductor nanostructures;
 * Quantum mechanics, tunneling processes in semiconductor nanostructures;
 * Quantum mechanics of fractional dimensions and its applications to the physics of semiconductors and semiconductor nanostructures.

Algis Jurgis Kundrotas' research interests include:
 * Semiconductor physics, optical electronics and spectroscopy;
 * Quantum phenomena of semiconductor heterogeneous formations;
 * Interactions of semiconductor formations with nuclear particles;
 * Computer modelling of physical phenomena;
 * Quantum physics of fractional dimension space and its application to nanoparticles

Membership in professional societies

 * Member of the Lithuanian Physics Society;
 * Member of the Lithuanian Scientific Society;
 * Member of the International Society for Optical Engineering.

A. J. Kundrotas and the Lithuanian Revival Process
In 1988, a civic movement known as Sąjūdis - the Lithuanian Reconstruction Movement - began to emerge in Lithuania. Its first goal was to achieve genuine Lithuanian autonomy within then Soviet Union, but eventually the movement's goals grew to include the pursuit of full Lithuanian independence.

Prior to the founding meeting of the members of Sąjūdis, a meeting was held at the Lithuanian Academy of Sciences, which was attended by Professor Adolfas Dargys and Jurgis Kundrotas as representatives of the Institute of Semiconductor Physics. A meeting of research institute staff was held at the Lithuanian Academy of Sciences on 15 February 1988. Here a declaration was adopted demanding the abolition of the Molotov-Ribbentrop Pact, recognition of the illegality of Lithuania's incorporation into the USSR, and the restoration of Lithuania as a sovereign state. Jurgis Kundrotas was also responsible for signing the declaration. It is therefore not surprising that the most important centres of the Sąjūdis movement in Vilnius at that time were the Institutes of Semiconductor Physics and Physics. Here they raised money, sewed flags, painted posters, prepared important documents, such as proposals for a constitution, for the introduction of the presidency, etc.

During these revival processes, the Lithuanian Union of Scientists was founded, which was one of the most influential organisations. Jurgis Kundrotas was the head of the secretariat of the Lithuanian Union of Scientists and the editor-in-chief of the newspaper Mokslo Lietuva (Lithuanian Science). This publication had a circulation of 5,000 copies, and its supplement for English language students "Step by Step" had a circulation of 35,000 copies.

Lithuania achieved full independence on 11 March 1990, thanks to Vytautas Landsbergis' initiative, when the Supreme Soviet of the Lithuanian Soviet Socialist Republic proclaimed the Law on the Restoration of the Independent State of Lithuania. Lithuania did not achieve real independence until after 21 August 1991.

Awards
Lithuanian National Award in Science (2000). In March 2001, Jurgis Kundrotas and his colleagues (Professor Adolf Dargis and Dr. Neria Žurauskienė) were awarded the National Award for Merit in Physical Sciences for the year 2000 for the series of papers Shock and Tunnel Ionization in Semiconductors.

Family and relatives

 * His wife Bronislava (Tamašauskaitė) Kundrotienė graduated from the Pedagogical Institute in Vilnius, majoring in mathematics.
 * The eldest daughter Monika Granja (born in 1974) graduated from the Faculty of Law of Charles University in Prague. Now she is the Director of the Committee of Good Will – Olga Havel Foundation in the Czech Republic.
 * Younger daughter Agne Johannessen (born in 1977) studied physics at the University of Vilnius and earned a PhD in Physics from the University of Glasgow. She works in Norway as a researcher (associate professor) at the University of South-Eastern Norway (Vestfold, Bakkenteigen).
 * Son Benas Kundrotas (born in 1978) graduated from Vilnius Gediminas Technical University (VILNIUS TECH) and the Lithuanian Military Academy. He holds a PhD in electrical and electronic engineering and works at the Government Office of the Republic of Lithuania.
 * Son-in-law (husband of daughter Agne Johannessen) Erik Andrew Johannessen has a Ph.D. degree in bioelectronics from Liverpool University in the UK. He works in Norway as a university professor at the University of South-Eastern Norway (Vestfold, Bakkenteigen).
 * Daughter-in-law (wife of Banas Kundrotas) Greta (Meškauskaitė) Kundrotienė graduated from Vilnius Pedagogical University.
 * Granddaughter Karolina Granja (daughter of Monika Granja) graduated from the Universities of Berlin and Amsterdam, lives in Berlin and works in the field of environmental economics.
 * Grandchildren (from son Benas Kundrotas): Adelė, Tadas.

Bibliography (selection, chronologically)

 * Jurgis Kundrotas, Adolfas Dargys. Electron tunneling from an ultrathin quantum well in constant and alternating electric fields. Phys. Status Solidi B, V. 134, No. 1, pages 267 to 274 (1986).
 * Adolfa Dargys, Jurgis Kundrotas. Mikrokalkuliatorius darbui ir poilsiui (A micro-calculator for work and leisure), Mokslas, Vilnius (1986), 100 pages
 * Adolfas Dargys, Jurgis Kundrotas. Handbook on Physical Properties of Ge, Si, GaAs and InP, Vilnius, Science and Encyclopedia Publishers; (1994); ISBN 5-420-01088-7; 262 pages
 * Jurgis Kundrotas, Adolfas Dargys, A. Čėsna. The hot electron distribution function under impurity breakdown conditions. Phys. Status Solidi B, V. 194, No. 2, pages 649 to 660; (1996).
 * Jurgis Kundrotas. Impact ionization coefficient of excitons in n-GaAs. Semicond. Sci. Technol., V. 14, No. 5, pages 461 to 464 (1999).
 * Jurgis Kundrotas. GaAs/AlGaAs technologija (GaAs/AlGaAs technology). Puslaidininkių fizikos institutas (Institute of Semiconductor Physics), Vilnius (1999); 114 pages
 * Jurgis Kundrotas. GaAs/AlGaAs savybės (GaAs/AlGaAs properties), Puslaidininkių fizikos institutas (Institute of Semiconductor Physics), Vilnius (2001) 168 pages
 * Jurgis Kundrotas, A. Čerškus, S. Ašmontas, G. Valušis, B. Sherliker, M. P. Halsall, M. J. Steer, E. Johannessen, and P. Harrison. Excitonic and impurity-related optical transitions in beryllium δ-doped GaAs/AlAs multiple quantum wells: Fractional-dimensional space approach. Phys. Rev. B, V. 72, No 23, 235322 (11) (2005).
 * Jurgis Kundrotas, A. Čerškus, S.Ašmontas, G. Valušis, M. P. Halsall, E. Johannessen, P. Harison. Impurity-induced Huang-Rhys factor in beryllium δ-doped GaAs/AlAs multiple quantum wells: fractional-dimensional approach. Semicond. Sci. Technol., V. 22, No 9, pages 1070 to 1076 (2007).
 * Jurgis Kundrotas, A. Čerškus, G. Valušis, L.H. Li, E.H. Linfield, A. Johannessen, E. Johannessen. Light emission lifetimes in p-type δ-doped GaAs/AlAs multiple quantum wells near the Mott transition.. J.Appl. Phys., V. 112, No 4, pages 043105-1-5 (2012).
 * Jurgis Kundrotas, A. Čerškus, G. Valušis, E.H. Linfield, E. Johannessen, A. Johannessen. Dynamics of free carriers-neutral impurity related optical transitions in Be and Si δ-doped GaAs/AlAs multiple quantum wells: Fractional-dimensional space approach. Lithuanian J. Phys., Vol. 54, No 4, pages 233 to 243 (2014).
 * Benas Kundrotas, Algis Jurgis Kundrotas. Modern Car Handbook. Vilnius (2020); 242 pages; ISBN 978-609-475-496-8