User:Nhewak

Experimental procedure for Gate Oxidation

(1). All wafers were cleaned in HF buffer for 5 seconds and rinsed with DI water for 90 seconds. The chips were then spun dried and baked-out for 5 minutes at 125 oC in post-bake oven.

(2). Cleaning chips for inorganic contamination. RCA cleaning step for inorganic contamination using a 5:1:1 solution of HP H2O: 30% H2O2: 37% HCl for 5 min. (This solution has been found to be highly effective in removing almost all metallic contaminants through acid complexing reactions.) Typical bath temperature is 75 - 85˚ C, and immersion time 20 min. Then cleaning was finished with HP H2O rinse.

(3). Furnace was pre-filled with oxygen (flow rate -70 steel) for about 10 min at 1100oC.

(4). All the wafers were loaded into the boat facing towards the furnace.

(5). Chips were placed inside the neck and let them rest for 2min.

(6). The boat was pushed into the furnace within 1 min then on TCE.

(7). After 5min nitrogen flow was switched to 70 steel and stop TCE flow.

(8). Nitrogen was drived-in for 30min and the sample was taken out slowly (with in 2min).