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The optical Hall effect is a physical phenomenon, which describes the occurrence of magnetic field induced dielectric and/or magnetic polarization at optical wavelengths, transverse and longitudinal to the incident electric field (Fig. OHE(*Not sure if it's common to reference figures in Wikipedia body text)), analogous to the static electrical Hall effect (Fig. EHE). Measurement of the optical Hall effect can be performed within the concept of generalized ellipsometry, i.e., with plane parallel waves incident at oblique angle upon a sample with plane parallel interfaces, in transmission or reflection configuration, for example.

Theory
The Optical Hall effect relates to magnetic field induced changes in the optical properties of materials, in general.

Test equation

$$	\varepsilon_{\text{OHE}}(\mathbf{B}) = \varepsilon_{_{\mathbf{B}=0}} + \varepsilon_{_{\mathbf{B}}}. $$

Nondestructive determination of free charge carrier parameters in semiconductor materials
A specific application of the Optical Hall effect is the determination of free charge carrier parameters in doped semiconductors. The unique advantage of the Optical Hall effect over alternative methods is the ability to determine the signature of the charge (electron, hole), volume (3D) or sheet (2D) density optical mobility and effective mass including anisotropy of the latter two. The material of interest can be hidden within multiple layer stacks. Due to different signatures, multiple carrier species can be differentiated such as light and heavy hole mass carrier densities, for example, and properties of 2D densities at the top of conductive substrates can be measured. No electrical contacts are required for measurement of the Optical Hall effect.

Terahertz Electron Paramagnetic Resonance ellipsometry
Another specific application of the Optical Hall effect is the observation of polarized spin transitions due to electron paramagnetic resonances, for example, in the Terahertz spectral region. Such resonances are due to the occurrence of magnetic polarization under the influence of an external magnetic field. This effect is called Terahertz Electron Paramagnetic Resonance and can be measured with generalized ellipsometry principles and instrumentation. [RefXXX]

Landau Level spectroscopy in quantum confined carrier systems
In semiconductor industries the microwave-detected photoconductivity method is widely used to measure excess carrier properties and characterize bulk single crystal materials.