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Annett Thøgersen (born 1980) is a Norwegian physicist working mainly with transmission electron microscopy studies of inorganic materials and nanostructures. She is Senior Research Scientist at SINTEF in Oslo, Norway.

Education and career
Thøgersen completed her master's degree from the Department of Physics, University of Oslo, in 2004 and earned a PhD in physics in 2009 with a dissertation entitled TEM and XPS studies of nanocrystals and clusters in nanostructured materials used for memory storage applications.

Jensen was in 2019 awarded a prestigious Young Research talent project from the Norwegian Research Council. In the project named "Novel (M,Ga)2O3 thin films for two-dimensional electron gas devices (GO2DEVICE)", fabrication of a high-electron-mobility transistor (HEMT) based on novel (M,Ga)2O3 thin film heterostructures will be pursued (M = Al, In). Leading up to this project she has specialized in using photoemission spectroscopy to study band gap variations and band alignment in semiconducting materials. In addition to the GO2DEVICE project she is active in several research projects such as "A highly efficient and stable electrode for solar-driven water electrolysis, interrogated by advanced operando and in situ techniques" (Solopp) and the project "Centrifuge Nano Technology: Nano silicon anodes for Li-ion batteries" (DOVRE).