User:Roserina/sandbox

Dr. Lan Fu
Dr. Lan Fu received a Masters of Science degree from the University of Science and Technology of China in 1996 and a PhD degree from the Australia National University in 2001. Dr. Lan Fu is currently an Australian Research Council (ARC) Future Fellow at the Dept. of Electronic Materials Engineering, ANU. She has published over 100 journal/conference papers, two book chapters and held two US patents. Being the recipient of the prestigious IEEE Photonic Society Graduate Student Fellowship (2000), ARC Postdoctoral Fellowship (2002) and ARF/QEII Fellowship (2005). Dr. Lan Fu is a senior member of IEEE, IEEE/Photonics and EDS societies, and the Chapter Chair of the Nanotechnology Council of IEEE ACT Section.

Research interests
Dr. Lan Fu’s main research interests include design, fabrication and integration of optoelectronic devices (lasers and photodetectors) and high efficiency solar cells based on low dimensional III-V compound semiconductor structures including quantum wells, self-assembled quantum dots and nanowires grown by metalorganic chemical vapour deposition (MOCVD).

Areas of expertise

 * Condensed Matter Physics
 * Classical And Physical Optics
 * Materials Engineering
 * Nanotechnology
 * Compound Semiconductors
 * Nanomaterials
 * Nanophotonics

Research Projects

 * Quantum dot infrared photodetectors
 * Quantum well lasers based integrated devices
 * Quantum well/dot solar cells (based on epitaxial III-V semiconductors)
 * Nanowire optoelectonic devices
 * Nanowire solar cells

Publications

 * Peng, K, Parkinson, P, Boland, J et al 2016, 'Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors', Nano Letters.
 * Gao, Q, Dubrovskii, V, Caroff-Gaonac'h, P et al 2016, 'Simultaneous Selective-Area and Vaporâˆ’Liquidâˆ’Solid Growth of InP Nanowire Arrays', Nano Letters, vol. 16, pp. 4361-4367.
 * R Xu, S Zhang,, F Wang, J Yang, J Pei, YW Myint, B Xing, Z Yu, L Fu, Qin, QH and Y Lu, 2016, 'Extraordinarily Bound Quasi-One-Dimensional Trions in Two-Dimensional Phosphorene Atomic Semiconductors', ACS Nano, vol. 10, no. 2, pp. 2046-2053.
 * Peng, K, Parkinson, P, Fu, L et al 2015, 'Single nanowire terahertz detectors', Nano Letters, vol. 15, no. 1, pp. 206-210.
 * Peng, K, Parkinson, P, Fu, L et al, eds, 2015, Photoconductive terahertz receivers utilizing single semiconductor nanowires, IEEE, TBC.
 * Li, Z, Wenas, Y, Fu, L et al 2015, 'Influence of Electrical Design on Core - Shell GaAs Nanowire Array Solar Cells', IEEE Journal of Photovoltaics, vol. 5, no. 3, pp. 854-864.
 * Peng, K, Parkinson, P, Fu, L et al 2015, 'Single nanowire photoconductive terahertz detectors', Nano Letters, vol. 15, no. 1, pp. 206-210.
 * Li, T, Lu, H, Fu, L et al 2015, 'Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells', Applied Physics Letters, vol. 106, no. 5, pp. 1-5.
 * Wang, F, Gao, Q, Peng, K et al 2015, 'Spatially resolved doping concentration and nonradiative lifetime profiles in single Si-Doped InP nanowires using photoluminescence mapping', Nano Letters, vol. 15, no. 5, pp. 3017-3023.
 * Nasiri-Varg, N, Bo, R, Wang, F et al 2015, 'Ultraporous Electron-Depleted ZnO Nanoparticle Networks for Highly Sensitive Portable Visible-Blind UV Photodetectors', Advanced Materials, vol. 27, no. 29, pp. 4336-4343.
 * Yuan, X, Yuan, X, Caroff-Gaonac'h, P et al 2015, 'Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering', Advanced Materials, vol. 27, no. 40, pp. 6096-6103.
 * Li, Z, Yuan, X, Yuan, X et al 2015, 'Room temperature GaAsSb single nanowire infrared photodetectors', Nanotechnology, vol. 26, no. 44.
 * Gao, Q, Fu, L, Li, L et al 2015, 'Direct Characterization of Axial p-n Junctions for InP Nanowire Array Solar Cells Using Electron Beam-Induced Current', Light, Energy and the Environment 2015, Optical Society of American (OSA), America.
 * Zhong, Z, Li, Z, Fu, L et al 2015, 'InP single nanowire solar cells', Light, Energy and the Environment 2015, Optical Society of American (OSA), America.
 * Hu, W, Lau, K, Liu, Y et al 2015, 'Colossal Dielectric Permittivity in (Nb+Al) Codoped Rutile TiO2 Ceramics: Compositional Gradient and Local Structure', Chemistry of Materials, DOI: 10.1021/acs.chemmater.5b01351
 * Fu, L, Mokkapati, S, Tan, H et al 2014, 'Numerical simulation on core-shell GaAs nanowire array solar cells', Optics for Solar Energy, Optical Society of American (OSA), USA.
 * Gao, Q, Saxena, D, Wang, F et al 2014, 'Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing', Nano Letters, vol. 14, no. 9, pp. 5206-5211.
 * McKerracher, I, Fu, L, Tan, H et al 2014, 'Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors with bandpass guided-mode resonance filters', Physica Status Solidi: Rapid Research Letters, vol. 8, no. 1, pp. 69-73.
 * Gao, Q, Fu, L, Wang, F et al 2014, 'Selective area epitaxial growth of InP nanowire array for solar cell applications', 2014 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), IEEE, New York, pp. 252-253.
 * Peng, K, Parkinson, P, Fu, L et al 2014, 'Single GaAs/AlGaAs Nanowire Photoconductive Terahertz Detectors', 2014 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), IEEE, New York, pp. 221-222.
 * Wang, F, Gao, Q, Peng, K et al 2014, 'Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires', 2014 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), IEEE, New York, pp. 272-274.
 * McKerracher, I, Fu, L, Tan, H et al 2013, 'Integration of bandpass guided-mode resonance filters with mid-wavelength infrared photodetectors', Journal of Physics D: Applied Physics, vol. 46, no. 9, pp. 1-8.
 * Jolley, G, Jolley, G, Faraone, L et al 2013, 'A study of quantum well solar cell structures with bound-to-continuum transitions for reduced carrier recombination', Applied Physics Letters, vol. 102, no. 21, pp. 1-4.
 * Lysevych, M, Tan, H, Karouta, F et al 2013, 'Merged beam laser design for reduction of gainsaturation and two-photon absorption in high power single mode semiconductor lasers', Optics Express, vol. 21, no. 7, pp. 8276-8285.
 * Parkinson, P, Lee, Y, Fu, L et al 2013, 'Three-dimensional in situ photocurrent mapping for nanowire photovoltaics', Nano Letters, vol. 13, no. 4, pp. 1405-1409.
 * Gao, Q, Jiang, N, Joyce, H et al 2013, 'Compound semiconductor nanowires for optoelectronic devices', 10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013, Conference Organising Committee, Kyoto, pp. 1-2.
 * Turner, S, Mokkapati, S, Jolley, G et al 2013, 'Periodic dielectric structures for light-trapping in InGaAs/GaAs quantum well solar cells', Optics Express, vol. 21, no. 3, pp. 324-335.
 * Fu, L, Lu, H, Li, Z et al 2013, 'Nanostructure photovoltaics based on III-V compound semiconductors', Advanced Optoelectronics for Energy and Environment, AOEE 2013, Conference Organising Committee, Wuhan.
 * Tan, H, Jiang, N, Saxena, D et al 2013, 'III-V nanowires for optoelectronic applications',International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting, Conference Organising Committee, Toronto, ON, pp. 93-98.
 * Mokkapati, S, Lu, H, Turner, S et al 2012, 'Plasmonics for III-V semiconductor solar cells', IEEE Photonics Conference (IPC 2012), Conference Organising Committee, Burlingame, CA, pp. 56-57.
 * Jolley, G, Fu, L, Lu, H et al 2012, 'The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells', Progress in Photovoltaics: Research and Applications.
 * Lu, H, Mokkapati, S, Fu, L et al 2012, 'Plasmonic quantum dot solar cells for enhanced infrared response', Applied Physics Letters, vol. 100, no. 103505, pp. 1 - 4.
 * Tan, H, Jiang, N, Lee, Y et al 2012, 'III-V nanowires for optoelectronic applications', 5th International Conference on Computers and Devices for Communication, CODEC 2012, IEEE, Kolkata, pp. 1-3.
 * Jolley, G, McKerracher, I, Fu, L et al 2012, 'The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors', Journal of Applied Physics, vol. 111.
 * McKerracher, I, Fu, L, Tan, H et al 2012, 'Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers', Journal of Applied Physics, vol. 112, no. 11, pp. 1-11.
 * Li, Z, Hattori, H, Karouta, F et al 2012, 'Coupling of light from microdisk lasters to nano-antennas with nano-tapers', IEEE Photonics Conference (IPC 2012), IEEE Photonics Society, Piscataway NJ USA, pp. 889-890.
 * Wang, H, Parkinson, P, Tian, J et al 2012, 'Optoelectronic properties of GaAs nanowire photodector', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), Institute of Electrical and Electronics Engineers (IEEE Inc), New Jersey USA, pp. 139-140.
 * Sajewicz, P, Fu, L, Tan, H et al 2012, 'Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), Institute of Electrical and Electronics Engineers (IEEE Inc), New Jersey USA, pp. 137-138.
 * Gao, Q, Tan, H, Fu, L et al 2012, 'InP Nanowires Grown by SA-MOVPE', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), Institute of Electrical and Electronics Engineers (IEEE Inc), New Jersey USA, pp. 45-46.
 * Lysevych, M, Tan, H, Karouta, F et al 2012, 'Reduction of Gain-Saturation in Merged Beam Lasers', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), Institute of Electrical and Electronics Engineers (IEEE Inc), New Jersey USA, pp. 189-190.
 * Turner, S, Mokkapati, S, Jolley, G et al 2012, 'Dielectric Diffraction Gratings for Light-Trapping in InGaAs-GaAs Quantum Well Solar Cells', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), Institute of Electrical and Electronics Engineers (IEEE Inc), New Jersey USA, pp. 129-130.
 * Lu, H, Fu, L, Jolley, G et al 2012, 'Improved performance of InGaAs/GaAs Quantum Dot Solar Cells using Si-modulation doping', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), Institute of Electrical and Electronics Engineers (IEEE Inc), New Jersey USA, pp. 127-128.
 * Lee, Y, Li, Z, Fu, L et al 2012, 'Improved GaAs Nanorwire solar Cells Using AIGaAs for Surface Passivation', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), Institute of Electrical and Electronics Engineers (IEEE Inc), New Jersey USA, pp. 131-132.
 * Li, Z., Hattori, H.T., Parkinson, P., Tian, J., Fu, L., Tan, H.H. & Jagadish, C. 2012, "A plasmonic staircase nano-antenna device with strong electric field enhancement for surface enhanced Raman scattering (SERS) applications", Journal of Physics D: Applied Physics, vol. 45, no. 30.
 * Fu, L, Mokkapati, S, Barik, S et al 2011, 'Disordering of quantum structures for optoelectronic device integration', in Pallab Bhattacharya, Roberto Fornari, and Hiroshi Kamimura (ed.),Comprehensive Semiconductor Science and Technology, Elsevier, Amsterdam Netherlands, pp. 584-621.
 * Jolley, G, Fu, L, Tan, H et al 2011, 'Growth and confinement effects in III-V semiconductor nanostructures', Microoptics Conference (MOC 2011), Optical Society of America, Sendai Japan.
 * Fu, L, Lu, H, Mokkapati, S et al 2011, 'Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells', Photonics Society 2011 annual meeting, IEEE Photonics Society, Arlington, VA, pp. 387-388.
 * Fu, L, Vandervelde, T & Krishna, S 2011, 'Quantum Dot Infared Photodetectors', in El-Hang Lee, Louay Eldada , Manijeh Razeghi and Chennupati Jagadish (ed.), VLSI Micro- and Nanophotonics: Science, Technology, and Applications, CRC Press LLC, Boca Raton USA, pp. 23-1 to 23-24.
 * Jolley, G, Lu, H, Fu, L et al 2011, 'The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties', IEEE Photovoltaic Specialists Conference PVSC 2011, ed. Conference Program Committee, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway USA, pp. 513-516.
 * Li, Z, Hattori, H, Fu, L et al 2011, 'Merging photonic wire lasers and nanoantennas', Journal of Lightwave Technology, vol. 29, no. 18, pp. 2690-2697.
 * Headley, C, Fu, L, Parkinson, P et al 2011, 'Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation', IEEE Journal on Selected Topics in Quantum Electronics, vol. 17, no. 1, pp. 17-21.
 * Lu, H, Fu, L, Jolley, G et al 2011, 'Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells', Applied Physics Letters, vol. 98, no. 18, pp. 183509/1-3.
 * Li, Z, Hattori, H, Fu, L et al 2011, 'Merging photonic wire lasers and nanoantennas', Journal of Lightwave Technology, vol. 29, no. 18, pp. 2690-2697.
 * McKerracher, I, Wong Leung, Y, Jolley, G et al 2011, 'Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors', IEEE Journal of Quantum Electronics, vol. 47, no. 5, pp. 577-590.
 * Headley, C, Fu, L, Parkinson, P et al 2011, 'Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation', IEEE Journal on Selected Topics in Quantum Electronics, vol. 17, no. 1, pp. 17-21.
 * Du, S, Fu, L, Tan, H et al 2011, 'Investigation of ion implantation induced intermixing in InP based quaternary quantum wells', Journal of Physics D: Applied Physics, vol. 44, no. 475105, pp. 1-7.
 * Liu, G, Fu, L, Rode, A. V., Craig, V., 'Water droplet motion control on superhydrophobic surfaces: Exploiting the Wenzel-to-Cassie transition', Langmuir, vol. 27, pp. 2595-2600 (2011).
 * Li, Z, Hattori, H, Fu, L et al 2010, 'High efficiency coupling of light from photonic wire lasers into nano-antennas', 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, IEEE, Canberra, ACT, pp. 67-68.
 * Liu, D, Hattori, H, Fu, L et al 2010, 'Increasing the coupling efficiency of a microdisk laser to waveguides by using spiral structures', 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, IEEE, Canberra, ACT, pp. 69-70.
 * Liu, D, Hattori, H, Fu, L et al 2010, 'Analysis of multi-wavelength photonic crystal single-defect laser arrays', 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, IEEE, Denver, CO, pp. 500-501.
 * Du, S, Fu, L, Tan, H et al 2010, 'Study of intermixing mechanism in AlInGaAs/InGaAs quantum well', 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, IEEE, Canberra, ACT, pp. 47-48.
 * Li, Z, Hattori, H, Fu, L et al 2010, 'High efficiency coupling of light from photonic wire lasers into nano-antennas', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010), ed. H. Hoe Tan, Institute of Electrical and Electronics Engineers (IEEE Inc), Australia, pp. 67-68.
 * Majid, A, Fu, L, Jagadish, C et al 2010, 'MOCVD grown quantum dot-in-a-well solar cells', 11th International Symposium on Advanced Materials, ISAM-2009, Trans Tech Publications Ltd., Islamabad, pp. 398-403.
 * Headley, C, Fu, L, Parkinson, P et al 2010, 'Improved performance of GaAs-based terahertz emitters', 35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010, IEEE, Rome.
 * Liu, D, Hattori, H, Fu, L et al 2010, 'Increasing the coupling efficiency of a microdisk laser to waveguides by using well designed spiral structures', Journal of Applied Physics, vol. 107, no. 4, pp. 043105-1 - 043105-8.
 * Jolley, G, Lu, H, Fu, L et al 2010, 'Electron-hole recombination properties of In0.5 Ga0.5 As/GaAs quantum dot solar cells and the influence on the open circuit voltage', Applied Physics Letters, vol. 97, no. 12, p. 3.
 * Jolley, G, Fu, L, Tan, H et al 2010, 'The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors', Nanoscale, vol. 2, no. 7, pp. 1128-1133.
 * Fu, L, Jolley, G, Lu, H et al 2010, 'Temperature effect on device characteristics of InGaAs/GaAs quantum dot solar cell', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010), ed. H. Hoe Tan, Institute of Electrical and Electronics Engineers (IEEE Inc), Australia, pp. 716-717.
 * McKerracher, I, Wong Leung, Y, Jolley, G et al 2010, 'Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010), ed. H. Hoe Tan, Institute of Electrical and Electronics Engineers (IEEE Inc), Australia, p. 2.
 * Lu, H, Fu, L, Jolley, G et al 2010, 'Temperature Dependence of Dark Current Properties of InGaAs/GaAs Quantum Dot Solar Cells', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010), ed. H. Hoe Tan, Institute of Electrical and Electronics Engineers (IEEE Inc), Australia, pp. 127-128.
 * McKerracher, I, Fu, L, Tan, H et al 2010, 'Thermal expansion coefficients and composition of sputter-deposited silicon oxynitride thin films', Journal of Physics D: Applied Physics, vol. 43, no. 33, p. 8.
 * Du, S, Fu, L, Tan, H et al 2010, 'Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells', Semiconductor Science and Technology, vol. 25, no. 5, p. 7.
 * Hakkarainen, T, Douheret, O, Anand, S et al 2010, 'Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy', Applied Physics Letters, vol. 97, no. 4, p. 3.
 * Liu, D, Hattori, H, Fu, L et al 2010, 'The temperature dependence of InGaAs single-wavelength quantum well and multi-wavelength quantum dot square resonator microlasers', Journal of Physics D: Applied Physics, vol. 43, no. 13, pp. 135102/ 1-6.
 * Liu, D, Hattori, H, Fu, L et al 2009, 'Coupling Analysis of GaAs-Based Microdisk Lasers With Different External Claddings', Journal of Lightwave Technology, vol. 27, no. 22, pp. 5090-5098.
 * Jolley, G, Fu, L, Tan, H et al 2009, 'Properties of In0.5Ga0.5As/GaAs/ Al0.2Ga0.8 As quantum-dots-in-a-well infrared photodetectors', Journal of Physics D: Applied Physics, vol. 42, no. 9, p. 8.
 * Jolley, G, Xiao, B, Fu, L et al 2009, 'Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors', Journal of Physics D: Applied Physics, vol. 42, no. 11, p. 5.
 * Liu, D, Hattori, H, Fu, L et al 2009, 'Single-mode operation of a large optically pumped triangular laser with lateral air trenches', Journal of the Optical Society of America B, vol. 26, no. 7, pp. 1417-1422.
 * Jolley, G, Fu, L, Tan, H et al 2008, 'Effects of well thickness on the spectral properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors', Applied Physics Letters, vol. 92, no. 19, pp. 1-3.
 * McKerracher, I, Fu, L, Tan, H et al 2008, 'Impurity-free vacancy disordering of quantum heterostructures with SiOxNy encapsulants deposited by magnetron sputtering', Nanoengineering: Fabrication, Properties, Optics, and Devices 2008, ed. Elizabeth A. Dobisz, Louay A. Eldada, SPIE - The International Society for Optical Engineering, Washington, pp. 70390U/1-10.
 * Du, S, Fu, L, Tan, H et al 2008, 'Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and nAlGaAs/InGaAs/InP quantum wells', International Conference on Nanoscience and Nanotechnology (ICONN 2008), ed. Conference Program Committee, Institute of Electrical and Electronics Engineers (IEEE Inc), USA, pp. 32-35.
 * McKerracher, I, Hattori, H, Fu, L et al 2008, 'Photonic crystal-enhanced quantum dot infrared photodetectors', Nanoengineering: Fabrication, Properties, Optics, and Devices 2008, ed. Elizabeth A. Dobisz, Louay A. Eldada, SPIE - The International Society for Optical Engineering, Washington, pp. 70390S/1-11.
 * Jolley, G, Fu, L, Tan, H et al 2008, 'Effects of annealing on the spectral response and dark current of quantum dot infrared photodetectors', Journal of Physics D: Applied Physics, vol. 41, no. 215101, pp. 1-7.
 * Chen, H, Zhang, H, Fu, L et al 2008, 'Nano Au-decorated boron nitride nanotubes: Conductance modification and field-emission enhancement', Applied Physics Letters, vol. 92, no. 243105, pp. 1-3.
 * Fu, L, Li, Q, Kuffner, P et al 2008, 'Two-color InGaAs/GaAs quantum dot infrared photodetectors by selective area interdiffusion', Applied Physics Letters, vol. 93, no. 1, pp. 1-3.
 * Barik, S, Fu, L, Tan, H et al 2008, 'Role of Stress on Impurity Free Disordering of Quantum Dots',Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008), ed. Michael Cortie Andres Cuevas John Dell Chennupati Jagadish Martin Kocan Barry Lu, Institute of Electrical and Electronics Engineers (IEEE Inc), Los Alamitos USA, pp. 221-224.
 * Buda, M, Iordache, G, Mokkapati, S et al 2008, 'Analytical expression for the quantum dot contribution to the quasi static capacitance for conduction band characterization', Journal of Applied Physics, vol. 104, no. 2, pp. 1-11.
 * Castro-Camus, E, Fu, L, Lloyd-Hughes, J et al 2008, 'Photoconductive response correction for detectors of terahertz radiation', Journal of Applied Physics, vol. 104, no. 053113, pp. 1-7.
 * Chen, H, Chen, Y, Liu, Y et al 2008, 'Over 1.0 mm-long boron nitride nanotubes', Chemical Physics Letters, vol. 463, no. 1-3, pp. 130-133.
 * Gareso, P, Buda, M, Fu, L et al 2007, 'Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures', Semiconductor Science and Technology, vol. 22, pp. 988-992.
 * Castro-Camus, E, Lloyd-Hughes, J, Fu, L et al 2007, 'An ion-implanted InP receiver for polarization resolved terahertz spectroscopy', Optics Express, vol. 15, no. 11, pp. 1-11.
 * Chen PhD, Y, Fu, L, Chen, Y et al 2007, 'Tunable Electric Conductivities of Au-Doped Boron Nitride Nanotubes', NANO, vol. 2, no. 6, pp. 1-6.
 * Barik, S, Fu, L, Tan, H et al 2007, 'Impurity-free disordering of InAs/InP quantum dots', Applied Physics Letters, vol. 90, pp. 243114 1-3.
 * Fu, L, McKerracher, I, Tan, H et al 2007, 'Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition', Applied Physics Letters, vol. 91, pp. 073515 1-3.
 * Jolley, G, Fu, L, Tan, H et al 2007, 'Influence of quantum well and barrier composition on the spectral behavior in InGasAs quantum dots-in-a-well infrared photodetectors', Applied Physics Letters, vol. 91, pp. 173508 1-3.
 * Mokkapati, S, Du, S, Buda, M et al 2007, 'Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing', Nanoscale Research Letters, vol. 2, pp. 550-553.
 * Drozdowicz-Tomsia, K, Goldys, E, Fu, L et al 2006, 'Doping Effect on Dark Currents in In0.5Ga0.5As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-organic Chemical Vapor Deposition', Applied Physics Letters, vol. 89, no. 11, pp. 113510-1-3.
 * Siegert, J, Marcinkevicius, S, Fu, L et al 2006, 'Recombination Properties of Si-doped InGaAs/GaAs Quantum Dots', Nanotechnology, vol. 17, pp. 5373-5377.
 * Gareso, P, Buda, M, Fu, L et al 2006, 'Proton Irradiation-induced Intermixing in InxGa1-xAs/InP Quantum Wells - the Effect of In Composition', Semiconductor Science and Technology, vol. 21, pp. 1441-1446.
 * Fu, L, Tan, H, McKerracher, I et al 2006, 'Effects of Rapid Thermal Annealing on Device Characteristics of InGaAs/GaAs Quantum Dot Infrared Photodetectors', Journal of Applied Physics, vol. 99, no. 11, pp. 114517-1-8.
 * Tan, H, Sears, K, Mokkapati, S et al 2006, 'Quantum Dots and Nanowires Grown by Metal-Organic Chemical Vapor Deposition for Optoelectronic Device Applications', IEEE Journal on Selected Topics in Quantum Electronics, vol. 12, no. 6, pp. 1242-1254.
 * Jolley, G, Fu, L, Tan, H et al 2006, 'Quantum Dots-in-a-Well Infrared Photodetectors Grown by MOCVD', International Conference on Nanoscience and Nanotechnology (ICONN 2006), ed. C. Jagadish & G.Q.Max Lu, Institute of Electrical and Electronics Engineers (IEEE Inc), Brisbane Australia, pp. 419-422.
 * Huang, S, Chen, Z, Bai, L et al 2006, 'Micro-photoluminescence Confocal Mapping of Single V-grooved GaAs Quantum Wire', Chinese Physics Letters, vol. 23, no. 12, pp. 3341-3344.
 * Lloyd-Hughes, J, Merchant, S, Fu, L et al 2006, 'Influence of Surface Passivation on Ultrafast Carrier Dynamics and Terahertz Radiation Generation in GaAs', Applied Physics Letters, vol. 89, no. 23, pp. 232201-1-3.
 * Fu, L, McKerracher, I, Tan, H et al 2006, 'Thermal Annealing Study on InGaAs/GaAs Quantum Dot Infrared Photodetectors', International Conference on Nanoscience and Nanotechnology (ICONN 2006), ed. C. Jagadish & G.Q.Max Lu, Institute of Electrical and Electronics Engineers (IEEE Inc), Brisbane Australia, pp. 493-496.
 * Huang, S, Chen, Z, Wang, F et al 2006, 'Carrier Transfer and Magneto-transport in Single Modulation-doped V-grooved Quantum Wire modified by Ion Implantation', Journal of Luminescence, vol. 119-120, pp. 198-203.
 * Fu, L, McGowan, P, Tan, H et al 2005, 'Study of Intermixing in InGaAs/(Al)GaAs Quantum Well and Quantum Dot Structures for Optoelectronic/Photonic Integration', IEE Proceedings - Circuits, Devices and Systems, vol. 152, no. 5, pp. 491-496.
 * Gao, Q, Fu, L, McGowan, P et al 2005, 'Quantum Dot Optoelectronic Devices', Microoptics Conference (MOC 2005), ed. Shinji Yamashita, Japan Society of Applied Physics, Japan, pp. J5-1-4.
 * Fu, L, McGowan, P, Sears, K et al 2005, 'In0.5Ga0.5As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-Organic Chemical Vapor Deposition', IEEE Electron Device Letters, vol. 26, no. 9, pp. 628-630.
 * Fu, L, Kuffner, P, McKerracher, I et al 2005, 'Rapid Thermal Annealing Study of InGaAs/GaAs Quantum Dot Infrared Photodetectors grown by Metal-Organic Chemical Vapour Deposition',Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005), ed. Ekaterina Golovchenko, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway USA, pp. 228-229.
 * Gareso, P, Buda, M, Fu, L et al 2004, 'Supression of Thermal Atomic Interdiffusion in C-doped InGaAs/AIGaAs Quantum Well Laser Structures using TiO2 Dielectric Layers', Applied Physics Letters, vol. 85, no. 23, pp. 5583-5585.
 * Gao, Q, Tan, H, Fu, L et al 2004, 'Effects of Thermal Stress on Interdiffusion in InGaAsN/GaAs Quantum Dots', Applied Physics Letters, vol. 84, no. 24, pp. 4950-4952.
 * Buda, M, Hay, J, Tan, H et al 2003, 'Effects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures', Journal of the Electrochemical Society, vol. 150, no. 8, pp. G481-G487.
 * Buda, M, Tan, H, Fu, L et al 2003, 'Improvement of Kink-free Operation in InGaAs/GaAs/AlGaAs High Power, Ridge Waveguide Laser Diodes', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002), ed. Michael Gal, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway, NJ, pp. 25-28.
 * Fu, L, McGowan, P, Tan, H et al 2003, 'Suppression of Interdiffusion in In0.5Ga0.5As/GaAs Quantum Dots', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002), ed. Michael Gal, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway, NJ, pp. 503-506.
 * Sears, K, Buda, M, Wong Leung, Y et al 2003, 'Influence of Rapid Thermal Annealing on a 30 Stack InAs/GaAs Quantum Dot Infrared Photodetector', Journal of Applied Physics, vol. 94, no. 8, pp. 5283-5289.
 * Buda, M, Tan, H, Fu, L et al 2003, 'Improvement of the Kink-free Operation in Ridge-waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridge', IEEE Photonics Technology Letters, vol. 15, no. 12, pp. 1686-1688.
 * Fu, L, McGowan, P, Tan, H et al 2003, 'Suppression of Interdiffusion in InGaAs/GaAs Quantum Dots using Dielectric Layer of Titanium Dioxide', Applied Physics Letters, vol. 82, no. 16, pp. 2613-2615.
 * Fu, L, Wong Leung, Y, Deenapanray, P et al 2002, 'Suppression of Interdiffusion in GaAs/AlGaAs Quantum-Well Structure Capped with Dielectric Films by Deposition of Gallium Oxide', Journal of Applied Physics, vol. 92, no. 7, pp. 3579-3583.
 * Deenapanray, P, Gong, B, Lamb, R et al 2002, 'Impurity-Free Disordering Mechanisms in GaAs-Based Structures using Doped Spin-on Silica Layers', Applied Physics Letters, vol. 80, no. 23, pp. 4351-4353.
 * Buda, M, Fu, L, Hay, J et al 2002, 'Impurity Free Intermixing for Optoelectronic Device Integration',Integrated Optoelectronics, ed. M J Deen, D Misra, J Ruzyllo, Electrochemical Society Inc, Pennington, NJ, pp. 89-105.
 * Fu, L, Heijden, R, Tan, H et al 2002, 'Study of Intermixing in a GaAs/AlGaAs Quantum-well Structure using Dope Spin-on Silica Layers', Applied Physics Letters, vol. 80, no. 7, pp. 1171-1173.
 * Fu, L, Tan, H, Jagadish, C et al 2001, 'Tuning the detection wavelength of quantum-well infrared photodetectors by single-high energy implantation', Applied Physics Letters, vol. 78, no. 1, pp. 10-12.
 * Li, N, Fu, L, Li, N et al 2001, 'The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors', Journal of Crystal Growth, vol. 222, pp. 786-790.
 * Dao, L, Gal, M, Fu, L et al 2001, 'Possibility of improved frequency response from intermixed quantum-well devices', Superlattices and Microstructures, vol. 29, no. 2, pp. 105-110.
 * Fu, L, Tan, H, Jagadish, C et al 2001, 'Tuning of detection wavelength of quantum-well infrared photodetectors by quantum-well intermixing', Infrared Physics and Technology, vol. 42, pp. 171-175.
 * Liu, Q, Li, N, Lu, W et al 2000, 'Wavelength tuning of GaAs/AlGaAs quantum well infrared photo detectors by proton implantation induced intermixing', Japanese Journal of Applied Physics, vol. 39, pp. 1687-1689.
 * Fu, L, Deenapanray, P, Tan, H et al 2000, 'Quality of Silica Capping Layer and its Influence on Quantum-Well Intermixing', Applied Physics Letters, vol. 76, pp. 837-839.
 * Deenapanray, P, Fu, L, Petravic, M et al 2000, 'Pulsed Anodic Oxidation of GaAs for Impurity-free Interdiffusion of GaAs/AlGaAs Quantum Wells', Surface and Interface Analysis, vol. 29, pp. 754-760.
 * Deenapanray, P, Tan, H, Fu, L et al 2000, 'Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing', Electrochemical and Solid-State Letters, vol. 3, pp. 196-199.
 * Johnston, M, Gal, M, Chen, Z et al 1999, 'Interdiffused quantum well infrared photodetector tuning for colour sensitive arrays', Applied Physics Letters, vol. 75, pp. 923-925.
 * Fu, L, Tan, H, Johnston, M et al 1999, 'Proton irradiation induced intermixing in InGaAs /(Al)GaAs quantum wells and quantum well lasers', Journal of Applied Physics, vol. 85, pp. 6786-6789.

Projects and Grants
Grants are drawn from ARIES. To add Projects or Grants please contact your College Research Office.
 * Towards high performance compound semiconductor nanowire array solar cells (Primary Investigator)
 * III-V semiconductor nanowires for ultrafast device applications (Primary Investigator)
 * High performance compound semiconductor nanowire optoelectronic devices (Primary Investigator)
 * Integrated Photonics for Secure Communication and Related Applications in Financial Transaction Data Analysis (Secondary Investigator)
 * High efficiency III-V solar cells based on low-dimensional quantum confined heterostructures(Primary Investigator)
 * Development of High Performance III-V Semiconductor Photoconductive Antennas for Terahertz Applications (Primary Investigator)
 * Growth and Intermixing of Quantum Dots for Multi Wavelength Infrared Photodetectors (Primary Investigator)