User:Sourav Bose (UU)

Rear surface passivation for CIGS solar cells have shown the potential to increase the efficiency. Al2O3 and SiO2 have been used as the passivation materials. Nano-sized point contacts on Al2O3 layer and line contacts on SiO2 layer provide the electrical connection of CIGS absorber to the rear electrode Molybdenum. The point contacts on the Al2O3 layer are created by e-beam lithography and the line contacts on the SiO2 layer are created using photolithography. Also, the implementation of the passivation layers does not change the morphology of the CIGS layers.