User talk:Divakar246448

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Making of Solarcell
Solar cells are also known as Photovoltaic cells.Solar cells work on the principle of photovoltaic effect so they are called photovoltaic cells. Photovoltaic is the process when a semiconductor of PN junction material is exposed to the light, the electrons are transferred from the valance band to the conduction band in the material. Which results in building up the voltage between the junction and hence the current is produced.

Solar cells are capable of producing the electricity by absorbing the light energy, light consists of energy packets which is known as photons. The amount of energy in the photon is directly proportional to its wavelength. The electric field across a p-n junction separates the charges.

The produced current is captured by the metallic contacts and stored.StructureThe functions of each layers are: Encapsulation(A): Its an encapsulation or cover used to protect the solar cell panels and the metallic contacts, these encapsulations are made of glass or some plastic materials.

Contact grid (B): A contact grid or metallic contact is an contact layer deposited over the solar panel to collect the electrons or to transfer the produced current to external loads. The contacts are prepared of good conductor materials.

Anti-Reflecting coating(C): The function of an anti-reflecting coating is to see that the absorbed light does not leak out or bounce out. The anti-reflecting coating should be coated carefully so that the light is guided to the solar panel. The thickness of the layer should be in the desired width.

N-type silicon (D): N-type silicon is prepared by doping the silicon with phosphorous or germanium. Phosphorous or germanium has excess valance electron than silicon. The available excess electron is available for conduction.

P-type Silicon(E): P type doping is done using the materials like boron which has one valance electron less than silicon. As the boron material has only three valance electrons it has an uncompleted bond i.e. free hole which can attract a free electron from the near by atom. Filling of one hole creates another hole in silicon atom. This movement of electrons is available for conduction.

Back Contact(F): The back side of a solar cell is coated with a metals like aluminum which acts as conductor.WorkingThe working of solar cell and the efficiency depends on the doping of the semiconductor material. The pn juntion formed by joining the P-type and N-type materials together creates a junction which produces the electric field. A normal silicon atom has 14 electrons arranged in 3 different shells. The silicon having 4 valence electrons in the out shell try to get bond with the other silicon atoms to get balanced so, it shares the electrons. Since there are no free electrons in the silicon atoms after sharing the electrons the silicon is a poor conductor of lectricity. We need the silicon to be conducting so the silicon is doped with the impurities which is called doping.

Silicon is doped with two types of impurities called p-type and n-type:

p-type refers to the positive-type means charge is positive and negative-type means charge is negative. P-type has an electron hole and n-type has an extra electron. For p-type doping the impurity to be added is boron which is having 5 valance electrons after sharing of electrons with silicon still one electron is free.

For n-type doping the impurity added is phosphorus which is having 3 valance electrons after sharing the electrons with silicon there is an empty electron hole. When these p and n-type semiconductors are combined together it forms a pn junction.When a photon is absorbed the free electron which is available due to p-type doping, is free and which forms an electron hole.

The electric field sends the electrons from p side to n side. When an external current path is provided the electrons flow through the path to the p side to unite with the holes. Which produces the electric field and produces current flow.Experiment FlowMask LayoutIn the process we will design the mask layout for n-well, contact window, and allumimium contact window. We are using the Auto CAD software for designing the mask layouts. The major applications of masking are to structure the resist to the desiered structure. In this lab we are are going to design three different masks for n-well, contacts and aluminium contacts.First Mask:The mask is designed for n-well i.e. the mask is used for deposition n impurities for the formation of pn junction.. The different sizes are for evaluating the performance.

The structure area are defined as 4cm*4cm, 4cm*1.5cm, 1cm*1cm.

Second Mask: The second layer of mask is designed to make the metal contacts on the solar cell on the n- well. From the figure 9 we can see the designed layout for the contact window.Third Mask:The third mask is designed to make the metal contacts on the solar cell to collect the current produced by the photovoltaic cell.

The metal contacts are aluminum. The different structures are of areas 4cm*4cm, 4cm*1.5cm and 1cm*1cm. The square and rectangular boxes represents the n-wells, horizontal lines in the n-well structures represents the contacts and the step structures in the n-wells are aluminum contacts for collecting current. The important thing to be remembered during the layout design is to make the alignment marks. The alignment marks are important to align the mask with the wafer for different processes like lithography. C-Supreme SimulationThe C-Supreme software is an simulation tool, we can simulate and see the results of oxidation processes, Junction depths after ion implantation and annealing process. The software gives us the advantage of selecting wide range of experiments for better results before performing the experiment.Simulation Program# C-Suprem practical: Simulation of the pn junction of a solar cell (front side of the wafer)# You have to optimize phosphorus implantation dose and diffusion + oxidation time ("solar 2" in flowchart) option quiet# one-dimensional simulationmode one.dim#

Definition of mesh Pay attention: wrong mesh lines can result in erroneous doping profile!#   Horizontal linesline x loc=0 spacing=0.005 tag=topline x loc=3.0 spacing=0.01#   Definition of bottom lineline x loc=10 tag=bottom# Defining the silicon waferregion silicon xlo=top xhi=bottombound expose xlo=top xhi=top  #   Intrinsic doping concentration of substrateinit bor conc=1.0e15 orient=100#          (on front side there is no Boron imlpant from back side doping!)# Implant anneal + oxidation + diffusion ("solar 1" in flowchart)diff temp=900 time=33 nitrogen diff temp=1000 time=10 dryo2diff temp=1000 time=90 weto2diff temp=1000 time=10 dryo2diff temp=1000 time=20 nitrogen# oxide etching etch oxide all# save datastructure out=oxideetch.str# growing scattering oxide 25 nmdiff temp=1000 time=20 dryo2# save datestructure out=padoxide.str# phosphorus ion implant (on front side) implant phosphorus dose=1.0e15 energy=90# Implant anneal + oxidation + diffusion ("solar 2" in flowchart) #          You have to optimize time for diffusion!#          Annealing diff temp=900 time=33 nitrogendiff temp=900 time=10 dryo2#          first oxidation diff temp=1000 time=70 dryo2#          diffusion: Optimize time to get 1,7 µm depth of the pn-junction diff temp=1000 time=500 nitrogen#          second oxidation (you have to optimize time to get 105 nm anti reflective coating)diff temp=1000 time=38 dryo2#          Surface annealingdiff temp=1025 time=26 nitrogen# save data(end result of phosphorus/boron depth should be 1.6µmstructure out=SolarCell.strquitIn the program we will simulate and optimize the first implantation and annealing of phosphorous in the front side of the wafer where the thermal oxidation process is included. The second oxidation is done for depositing the anti reflecting coating. The thickness of the reflecting coating is 105nm.The following graphs gives us the information about the doping concentration of phosphorous and boron, junction depth, and oxide deposition after implantation and annealing.ION IMPLANTATIONIon implantation is the process used for doping the phosphorus into the substrate. The process is carried out to get the pn-junction. The silicon substrate is p doped with a concentration of 1*1015. The ion implantation process we are doping the boron in the n- well for the formation of pn junction. In the ion implanter the wafers to be doped are kept at an angel of 7 degrees in order to avoid the ions passing through the substrate. All the process of moving the wafers in the implanter are done automatically by the machine. All the doping processes are carried out under vacuum. The ion beam source and the path of the ion beam. The mechanisms used to deflect the ion beam to make it possible to pass through the vacuum chamber.Oxidation and AnnealingThe process of oxidation and annealing is carried out to produce the silicon dioxide over the silicon substrate which is having the property of reducing the reflection of the absorbed light energy. As well to restore the crystalline structure of the phosphorus doped silicon substrate the process is known as annealing. The deposition of the silicon dioxide and the annealing depends on the parameters such as temperature, pressure, time etc, which plays major role in oxidation and annealing. We have used the C supreme software for simulating to test the different parameters which effects the process to get the required values.In the process we need to program the oxidation system or the desired range of temperature and time for oxidation and annealing process. The values which are used in the oxidation and annealing process differs from the C supreme values since, time plays a major factor we have choose the values which decreases the time of process.To test the processed wafer we can measure the oxide thickness and the carrier life time of the processed wafer. Better the life time of the carriers, better are the results for the solar cell. The oxide thickness is measured using the spectrometer the oxide thickness measured was 114nm. We can find the life time of the minorities and the diffusion length using the following formulas. LithographyThe lithography process is carried out to get the desired structures on the substrate. The primary lithography process is carried out to make the n-well structures to make the pn junction. So that the substrate gets the property of pn junction which is responsible for the flow of electrons and current production.The second lithography is carried out to make the contact windows As we know that now the whole front surface of solar cell is covered with 105nm thick oxide as an anti-reflective material. In order to access to junction for harvesting charges generated from solar cell and bringing it to outside world, it is required to provide metal contact to the surface of Solar cell. Bibliography[1] http://specmat.com/Overview%20of%20Solar%20Cells.html [2] http://www.britannica.com/EBchecked/media/1406/A-commonly-used-solar-cell structure[3] http://www.reuk.co.uk/How-Do-PV-Solar-Panels-Work.htm[4] https://sites.google.com/site/energysters/energy-sources/solar-energy[5] http://electrons.wikidot.com/methods-for-the-determination-of-ground-state-wavefunction

Your submission at Articles for creation: Draft:Making of Solar cell (June 14)
 Your recent article submission to Articles for Creation has been reviewed! Unfortunately, it has not been accepted at this time. Please read the comments left by the reviewer on your submission. You are encouraged to edit the submission to address the issues raised and resubmit when they have been resolved. . ''' Thank you for your contributions to Wikipedia! '''
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Hochschule Furtwangen University
The Hochschule Furtwangen University (HFU) (University of applied science Furtwangen), formerly the Fachhochschule Furtwangen (FHF) is a German university based in Furtwangen im Schwarzwald, Baden-Württemberg, Germany.

The university dates back to a school for clock making founded in 1850 by Robert Gerwig. After World War II, the school was split into two branches &mdash; one for engineering, the other for job training. The first one became a Fachhochschule when this new kind of universities was introduced in the early 1970s.

Facts and Figures
Status as of :	December 2013

Undergraduate Studies

 * 1) APPLIED HEALTH SCIENCES
 * 2) BIO AND PROCESS ENGINEERING
 * 3) BUSINESS INFORMATION SYSTEMS
 * 4) BUSINESS NETWORKING (E BUSINESS)
 * 5) COMPUTER NETWORKING
 * 6) COMPUTER SCIENCE
 * 7) COMPUTER SCIENCE IN MEDIA
 * 8) ELECTRONICS AND TECHNICAL COMPUTER SCIENCE
 * 9) INDUSTRIAL AUTOMATION AND MECHATRONICS
 * 10) INDUSTRIAL MANUFACTURING
 * 11) INDUSTRIAL MATERIALS ENGINEERING
 * 12) INDUSTRIAL VIRTUAL ENGINEERING
 * 13) INDUSTRIAL MEDTEC
 * 14) INFORMATION COMMUNICATION SYSTEMS
 * 15) INTERNATIONALE BETRIEBSWIRTSCHAFT
 * 16) INTERNATIONAL BUSINESS MANAGEMENT
 * 17) INTERNATIONAL ENGINEERING
 * 18) MECHANICAL ENGINEERING AND MECHATRONICS
 * 19) MEDIA DESIGN
 * 20) MEDICAL ENGINEERING
 * 21) MOLECULAR AND TECHNICAL MEDICINE
 * 22) ONLINE MEDIA
 * 23) PRODUCT ENGINEERING
 * 24) SALES AND MARKETING
 * 25) SECURITY & SAFETY ENGINEERING
 * 26) SERVICE MANAGEMENT
 * 27) SOFTWARE PRODUCT MANAGEMENT

For more details visit - http://en.hs-furtwangen.de/study-programmes/degree/undergraduate-programmes-all.html

Postgraduate Studies

 * 1) ADVANCED PRECISION ENGINEERING & MICROMEDICINE
 * 2) BIOMEDICAL ENGINEERING
 * 3) BUSINESS APPLICATION ARCHITECTURES
 * 4) BUSINESS CONSULTING
 * 5) COMPUTER SCIENCE
 * 6) COMPUTER SCIENCE IN MEDIA
 * 7) EXECUTIVE MASTER OF INTERNATIONAL BUSINESS MANAGEMENT
 * 8) INTERACTIVE MEDIA DESIGN
 * 9) INTERNATIONAL BUSINESS MANAGEMENT
 * 10) INTERNATIONAL MANAGEMENT
 * 11) MECHATRONIC SYSTEMS
 * 12) MEDICAL DEVICES & HEALTHCARE MANAGEMENT
 * 13) MEDICAL DIAGNOSTIC TECHNOLOGIES
 * 14) MICROMEDICINE
 * 15) MOBILE SYSTEMS
 * 16) SALES & SERVICE ENGINEERING
 * 17) SECURITY & SAFETY ENGINEERING
 * 18) SMART SYSTEMS
 * 19) SOFTWARE ENGINEERING
 * 20) SUSTAINABLE BIOPROCESS TECHNOLOGY
 * 21) TECHNICAL PHYSICIAN

For more details visit - http://en.hs-furtwangen.de/study-programmes/degree/postgraduate-programmes-all.html

Major Highlights
SMART SYSTEMS: ACQUIN accredited

The Smart Systems (SMA) master's programme replaced the Microsystems Engineering programme in the winter semester of 2011-12.

The study programme is focussed on applications in the areas of:
 * micro-electronics
 * micro-mechanics
 * micro-optics
 * computer engineering

Solar Cell Characteristrics
Characteristics of Solar Cell:

Analysis of DC characteristics of a solar cell under different illumination conditions. (i.e Dark room, Under Lamp and in room light)

Now a day’s solar cell is used for charging batteries and other electronic components in order to save the power.

A solar cell (also called a photo voltaic cell or photocell) is an electrical device that converts the energy of light directly into electricity by the photo voltaic effect

The operation of a photo voltaic (PV) cell requires 3 basic attributes: 1.	The absorption of light, generating either electron-hole pairs. 2.	The separation of charge carriers of opposite types. 3.	The separate extraction of those carriers to an external circuit.

Photo voltaic is the field of technology and research related to the practical application of photo voltaic cells in producing electricity from light, though it is often used specifically to refer to the generation of electricity from sunlight. Cells can be described as photo voltaic even when the light source is not necessarily sunlight (lamplight, artificial light, etc.). In such cases the cell is sometimes used as a photo detector (for example infrared detectors), detecting light or other electromagnetic radiation near the visible range, or measuring light intensity.

Assemblies of photo voltaic cells are used to make solar modules which generate electrical power from sunlight. Multiple cells in an integrated group, all oriented in one plane, constitute a solar photo voltaic panel or "solar photo voltaic module," as distinguished from a "solar thermal module" or "solar hot water panel." The electrical energy generated from solar modules, referred to as solar power, is an example of solar energy. A group of connected solar modules (such as prior to installation on a pole-mounted tracker system) is called a "PV array."

Methods
Two type of techniques are there to determine the IV Characteristics. 1.	2 -Wire 2.	4 - Wire In this experiment 4 – wire technique is used in order for measuring the low resistant and high current.

Task - 1
Initially the open circuit voltage (Voc) and the short circuit current (Isc) of the solar cell is determined by using a digital multimeter under different illumination conditions. F1 - In room light F2 - In dark room F3 – Under the lamp

 Polarity  Channel -1 : It is connected to the positive terminal of the solar cell Channel - 2: It is connected to the negative terminal of the solar cell From the above tabulation the following things are identified

Dark Room In dark room the light intensity will very less or there wont be any light, so the open circuit voltage is 0.9V the short circuit current is 0.35µA.

 Room Light  In room light the light intensity is high and so the short circuit current is also high.

 Under Lamp  The solar cell is placed under the lamp. At this situation the light intensity will be high because the solar cell receives lot of light.The open circuit voltage is 9.7V and the short circuit current is 0.0379 mA.

By using these three conditions it is very much clear that the current produced by the solar cell is directly propotional to the amount light intensity received by the solar cell.

Task – 2
The I – V characteristics of the solar cell is determained at different illumination condition as of done in task – 1 but here SMU is used to detrmine it.

The positive polarity of the solar cell is connected to the positive terminal of SMU channel [1 & 2] Similarly, negative polarity of the solar cell is connected to the negative terminal of the SMU channel [1 & 2]

Different Illumination Conditions: 1)	Dark Room 2)	Room Light 3 )    Under Lamp

 Dark Room  The solar cell is kept in the dark room and its characteristics are are observed Solar cells experience daily variations in light intensity, with the incident power from the sun varying between 0 and 1 kW/m2. At low light levels, the effect of the shunt resistance becomes increasingly important. As the light intensity decreases, the bias point and current through the solar cell also decreases, and the equivalent resistance of the solar cell may begin to approach the shunt resistance. When these two resistances are similar, the fraction of the total current flowing through the shunt resistance increases, thereby increasing the fractional power loss due to shunt resistance. So a solar cell with a high shunt resistance retains a greater fraction of its original power than a solar cell with a low shunt resistance.

 Room Light  Similarly, the solar cell is placed in a room light condition and its characterstics are observed.Consequently, under room light conditions, a solar cell with a high shunt resistance retains a greater fraction of its original power than a solar cell with a low shunt resistance.

 Under Lamp  Here the condition of solar cell is vice versa to the dark room condition. As the light intensity increases, the bias point and current through the solar cell also increases, and the equivalent resistance of the solar cell may begin to approach the shunt resistance. When these two resistances are similar, the fraction of the total current flowing through the shunt resistance decreases, thereby decreasing the fractional power loss due to shunt resistance. So a solar cell with a high shunt resistance retains a greater fraction of its original power than a solar cell with a low shunt resistance.

The DC characteristics of a solar cell is observed in three different modes by using both the multimeter and SMU. By using these conditions it is very much clear that the current produced by the solar cell is directly proportional to the amount light intensity received by the solar cell.

Draft:Characteristics of Solar Cell
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Your submission at Articles for creation: Draft:Characteristics of Solar Cell (June 16)
 Your recent article submission to Articles for Creation has been reviewed! Unfortunately, it has not been accepted at this time. Please read the comments left by the reviewer on your submission. You are encouraged to edit the submission to address the issues raised and resubmit when they have been resolved. . ''' Thank you for your contributions to Wikipedia! '''
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Wikipedia and copyright
Hello Divakar246448, and welcome to Wikipedia. Your addition to Hochschule Furtwangen University has had to be removed, as it appears to have added copyrighted material without permission from the copyright holder. While we appreciate your contributing to Wikipedia, there are certain things you must keep in mind about using information from your sources to avoid copyright or plagiarism issues here.


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Divakar
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Speedy deletion nomination of Divakar


A tag has been placed on Divakar requesting that it be speedily deleted from Wikipedia. This has been done under section A7 of the criteria for speedy deletion, because the article appears to be about a person or group of people, but it does not indicate how or why the subject is important or significant: that is, why an article about that subject should be included in an encyclopedia. Under the criteria for speedy deletion, such articles may be deleted at any time. Please read more about what is generally accepted as notable.

If you think this page should not be deleted for this reason, you may contest the nomination by visiting the page and clicking the button labelled "Click here to contest this speedy deletion". This will give you the opportunity to explain why you believe the page should not be deleted. However, be aware that once a page is tagged for speedy deletion, it may be removed without delay. Please do not remove the speedy deletion tag from the page yourself, but do not hesitate to add information in line with Wikipedia's policies and guidelines. If the page is deleted, and you wish to retrieve the deleted material for future reference or improvement, then please contact the deleting administrator, or if you have already done so, you can place a request here. Fai zan  16:32, 16 July 2014 (UTC)

Requests for adminship/divakar
I have archived your RfA, given that you did not complete the nomination process and you do not meet the implicit criteria for adminship (see WP:NOTNOW). I strongly encourage you to read Guide to requests for adminship. Antrocent (&#9835;&#9836;) 04:29, 8 August 2014 (UTC)

Draft:Characteristics of Solar Cell concern
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Draft:Making of Solar cell concern
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Your draft article, Draft:Characteristics of Solar Cell


Hello Divakar246448. It has been over six months since you last edited your WP:AFC draft article submission, entitled "Characteristics of Solar Cell".

The page will shortly be deleted. If you plan on editing the page to address the issues raised when it was declined and resubmit it, simply and remove the  or  code. Please note that Articles for Creation is not for indefinite hosting of material deemed unsuitable for the encyclopedia mainspace.

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Thanks for your submission to Wikipedia, and happy editing.  T K  K ! bark with me! 00:04, 16 January 2015 (UTC)

Your draft article, Draft:Making of Solar cell


Hello Divakar246448. It has been over six months since you last edited your WP:AFC draft article submission, entitled "Making of Solar cell".

The page will shortly be deleted. If you plan on editing the page to address the issues raised when it was declined and resubmit it, simply and remove the  or  code. Please note that Articles for Creation is not for indefinite hosting of material deemed unsuitable for the encyclopedia mainspace.

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Thanks for your submission to Wikipedia, and happy editing.  T K  K ! bark with me! 20:32, 17 January 2015 (UTC)

Speedy deletion nomination of Naadal


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If you think this page should not be deleted for this reason, you may contest the nomination by visiting the page and clicking the button labelled "Click here to contest this speedy deletion". This will give you the opportunity to explain why you believe the page should not be deleted. However, be aware that once a page is tagged for speedy deletion, it may be removed without delay. Please do not remove the speedy deletion tag from the page yourself, but do not hesitate to add information in line with Wikipedia's policies and guidelines. &mdash;&thinsp;JJMC89&thinsp; (T&middot;E&middot;C) 16:30, 23 May 2015 (UTC)